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| 2SA933AS transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : -0.15 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -50 a , i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma , i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =- 50 a, i c =0 -6 v collector cut-off current i cbo v cb =-60v, ie=0 -0.1 a emitter cut-off current i ebo v eb = -6v, ic=0 -0.1 a dc current gain h fe v ce =-6 v, ic= -0.1a 120 560 collector-emitter saturation voltage v cesat i c = -50ma, ib=-5ma -0.5 v transition frequency f t v ce =-12v, ic=-2ma f=30mhz 120 mhz classification of h fe rank q r s range 120-270 180-390 270-560 to-92s 1. emitter 2. collector 3. base 123 2SA933AS http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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